Low-noise high-speed Si nanowire field-effect transistors: Recent advances and opportunities in biosensor applications

摘要

This paper gives an overview of several approaches utilizing new parameters and effects, which may be useful for improving the calibration and functionality of nanowire (NW) field-effect transistor (FET) biosensors. We discuss the basic principles of high-speed low-noise Si NW FETs for biosensor applications. We explain the results of a capacitance coupling effect as a consequence of liquid-gate and back-gate control of channel conductivity for the registration of small extracellular signals corresponding to neuron-firing pulses extracted from background noise. Improved interface properties between the neuron and nanowires compared with flat large-area FETs were confirmed by studies using focused ion beam cuts. Characteristic times and frequencies related to single trap phenomena were classified as parameters for biosensing applications.