College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China;
College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China;
College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China;
College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China;
Silicon carbide; Silicon; MOSFET; Insulated gate bipolar transistors; Logic gates; Resistance heating; Junctions;
机译:1200V SiC MOSFET有望替代Si MOSFET和IGBT
机译:在窄电流脉冲条件下评估15-kV SiC MOSFET和20-kV SiC IGBT的长期可靠性和过流能力
机译:SiC MOSFET在短路测试下的能力和通过有限元分析进行热模型的开发
机译:1200V单芯片SIC MOSFET和SI IGBT短路能力的比较与分析
机译:工业发电厂的短路分析和断路器中断能力验证。
机译:1200V / 200A全SiC电源模块在开启瞬态时上侧和下侧开关的vgs特性的建模和分析
机译:1200V 100A SIC MOSFET和1200V 100A硅IGBT的性能比较