Structural properties and electrical characteristics of high-k GdTiO3 gate dielectrics for InGaZnO thin-film transistors

摘要

We investigated the structural properties and electrical characteristics of GdTiO3 dielectrics for IGZO TFT devices. We used XRD, XPS, and AFM to examine the structural, compositional, and morphological features of the GdTiO3 film, respectively. The IGZO TFT featuring a GdTiO3 gate dielectric exhibited a large field-effect mobility of 32.3 cm2/V-s, a small threshold voltage of 0.14 V, a high Ion/Ioff current ratio of 4.2 × 108, and a low subthreshold swing of 213 mV/decade.