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Design of a low phase noise voltage tuned DRO based on improved dielectric resonator coupling structure

机译:基于改进的介电共振器耦合结构的低相位噪声电压调谐DRO设计

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In this paper, we present a voltage tuned dielectric resonator oscillator (Vt-DRO) with a low phase noise, which is achieved by improving the coupling structure between the dielectric resonator and microstrip line. The Vt-DRO is a closed-loop type and is composed of 3 blocks; dielectric resonator, phase shifter, and amplifier. By modifying the coupling structure between the dielectric resonator and microstrip line, we achieved a group delay of about 53 nsec. The closed-loop Vt-DRO was implemented by closing the designed open-loop. As a result, the phase noise of the Vt-DRO was measured as −132.7 dBc/Hz at 100 kHz offset frequency, which was close to the predicted value using the measured open loop group delay at 5.3 GHz. The tuning-range of the Vt-DRO is about 5 MHz for tuning voltage of 0–10 V and the power is 4.5 dBm.
机译:在本文中,我们提出了一种具有低相位噪声的电压调谐介电共振器(Vt-DRO),这是通过改善介电共振器与微带线之间的耦合结构来实现的。 Vt-DRO是闭环型,由3个块组成;介电谐振器,移相器和放大器。通过修改介电共振器和微带线之间的耦合结构,我们获得了大约53 ns的群延迟。闭环Vt-DRO是通过关闭设计的开环来实现的。结果,在100 kHz偏移频率下,Vt-DRO的相位噪声被测量为-132.7 dBc / Hz,接近于使用5.3 GHz下测得的开环群时延所预测的值。对于0-10 V的调谐电压,Vt-DRO的调谐范围约为5 MHz,功率为4.5 dBm。

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