Memristance and memcapacitance modeling of thin film devices showing memristive behavior

摘要

In 2008, the fourth passive element “Memristor” was implemented as a device having both passivity and nonvolatile properties opening the way into new possibilities in the design and fabrication of innovative memory, arithmetic and logic architectures. Nano-features and ionic transport mechanism inherent in memristor device introduce new challenges into modeling, characterization and, in particular, in the related circuit simulation needs with system constructs. Therefore, in this paper, we analyze memristor device fundamentally to characterize the memristance paying particular attention to the hidden memcapacitance effect. Our proposed macro-model modifies takes into account some of the non ideal effects like tunneling current and the hidden memcapacitor constructed across non conducting materials. The model provides the insight for building a device as either memristive or memcapacitive system. The simulation results have been compared with HP published data which show good agreement.