Fabrication and characteristics of vertical type organic transistor using indenofluorenedione derivatives as a n type active layer

摘要

Organic field effect transistor (OFET) having advantages such as simple fabrication process, large area coverage, structural flexibility and low cost have been much attention because of the feasibility of application in flexible display, information tag, smart card and e-paper etc. [1]. High on-off ratio, low turn-on voltage and fast response time are most critical issues in the research and development of organic transistor. Recently, the charge injection process through metal / organic interface has been widely studied by a variety of methods. Especially, contact resistance and electrical properties of the conventional lateral type OFET were improved by using various metals and charge transfer materials [2].