Characterization and resistive switching properties of solution-processed HfO2, HfSiO4, and ZrSiO4 thin films on rigid and flexible substrates

摘要

Memristors, nonvolatile bipolar resistive switching devices first intentionally fabricated in 2008 [1], have attracted attention for use in a wide range of applications. To date, most memristors have been fabricated from TiOx [1] or TaOx [2]. However, it is necessary to explore the memristive properties of other dielectric materials, because these dielectrics may have advantageous properties that have not yet been explored.