INTERLAYER MEDIATED SOLID PHASE EPITAXY OF CoSi_2 AND (Co_(1-x)Ni_x)Si_2 ON Si(100) SUBSTRATE

摘要

Epitaxial growth of metal silicide such as CoSi_2 on Si substrate is of interest for both basic material study and semiconductor device application. A new method of hetero-epitaxy of CoSi_2/Si by solid phase reaction has been studied in recent years. It is interlayer mediated solid phase epitaxy (IMSPE). Various interlayers such as Ti, a-Si/Ti, Ni/Ti and Ni/SiO_x are applied for solid phase r eaction between Co film and Si(100) substrate. The experimental data show that the epitaxially grown CoSi_2 and (Co_(1-x)Ni_x)Si_2 films can be obtained by the IMSPE with these interlayers. A crystal lattice transformation model is proposed to understand the mechanism of CoSi_2/Si hetero-epitaxy by IMSPE. The intermediate layer has a key role in controlling the atomic interdiffusion, which leads to the lattice transformation at the interface of Si and epitaxial growth CoSi_2.