首页> 外国专利> ALUMINUM NITRIDE SUBSTRATE MANUFACTURING METHOD, ALUMINUM NITRIDE SUBSTRATE, AND METHOD OF REMOVING STRAIN LAYER INTRODUCED INTO ALUMINUM NITRIDE SUBSTRATE BY LASER PROCESSING

ALUMINUM NITRIDE SUBSTRATE MANUFACTURING METHOD, ALUMINUM NITRIDE SUBSTRATE, AND METHOD OF REMOVING STRAIN LAYER INTRODUCED INTO ALUMINUM NITRIDE SUBSTRATE BY LASER PROCESSING

机译:氮化铝基板制造方法,氮化铝基板和通过激光加工去除引入氮化铝基底中的应变层的方法

摘要

The problem to be solved by the present invention is to provide a novel technique that can remove a strain layer introduced into an aluminum nitride substrate. In order to solve this problem, the present aluminum nitride substrate manufacturing method involves a strain layer removal step for removing a strain layer in an aluminum nitride substrate by heat treatment of the aluminum nitride substrate in a nitrogen atmosphere. In this way, the present invention can remove a strain layer that has been introduced into an aluminum nitride substrate.
机译:本发明要解决的问题是提供一种可以去除引入氮化铝基底中的应变层的新技术。 为了解决这个问题,本发明的氮化铝衬底制造方法涉及通过在氮气氛中的氮化铝基板的热处理铝氮化铝基板中除去氮化铝基底中的应变层去除步骤。 以这种方式,本发明可以去除已引入氮化铝基底中的应变层。

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