Sheath and wafer profile adjustment at the edge edge through ion orbit control and plasma operation localized to the edge

摘要

PROBLEM TO BE SOLVED: To provide an edge ring assembly that realizes the etching uniformity at edge and extreme edge regions of a wafer.SOLUTION: An edge ring assembly 200 includes: an edge ring 210 configured to surround an ESC 103 connected to a first RF power supply; an annular electrode 202 disposed above an annular shelf 134 that is lower than a top surface 130 for supporting a substrate 105 of the ESC 103; a dielectric ring 211 disposed below the annular electrode 202 for isolation from the ESC 103 and positioned over the annular shelf 134; and a plurality of connectors 206 disposed through the dielectric ring 211 and connecting a second RF power supply and the annular electrode 202.SELECTED DRAWING: Figure 2B-1