首页> 外国专利> LITHIUM NIOBATE SINGLE CRYSTAL THIN FILM SUBJECTED TO DOMAIN INVERSION TREATMENT

LITHIUM NIOBATE SINGLE CRYSTAL THIN FILM SUBJECTED TO DOMAIN INVERSION TREATMENT

机译:铌酸锂单晶薄膜受域反转处理

摘要

PURPOSE: To improve nonlinear optical characteristics by subjecting the surface of a lithium tantalate substrate to lattice matching, then to a domain inversion treatment in such a manner that polarization inverts in crystal axis direction at every synchronization. ;CONSTITUTION: The optically polished lithium tantalate substrate 1 is brought into contact with a melt consisting of Li2O, Nb2O3, V2O5, Na2O, and MgO and the lattice matched Na, Mg-contg. lithium niobate single crystal thin film 2 is grown thereon by an epitaxial growth method. Stripe patterns 3 are formed thereon by photolithography and Ti is deposited by vacuum evaporation over the entire surface thereof, by which a Ti thin film 4 is formed. The stripe patterns 3 are then removed and the substrate is subjected to a heating treatment to diffuse the Ti. The substrate is thereafter rapidly cooled, by which the lithium niobate single crystal thin film having the inverted domain layer 5 is obtd. A part of this crystal is then cut out and one line of pattern is drawn by photolithography method in the direction perpendicular to the Ti pattern. The Ti is deposited by vacuum evaporation and is subjected to ion beam etching, by which a ridge type waveguide 6 is formed.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:通过对钽酸锂衬底的表面进行晶格匹配,然后进行畴反转处理,以使偏振在每次同步时都沿晶轴方向反转,从而改善非线性光学特性。 ;组成:将光学抛光的钽酸锂衬底1与由Li 2 O,Nb 2 O 3 ,V组成的熔体接触 2 O 5 ,Na 2 O和MgO,晶格匹配Na,Mg-contg。通过外延生长法在其上生长铌酸锂单晶薄膜2。通过光刻在其上形成条纹图案3,并且通过真空蒸发在其整个表面上沉积Ti,由此形成Ti薄膜4。然后去除条纹图案3,并对衬底进行热处理以扩散Ti。此后,迅速冷却基板,由此去除具有反转畴层5的铌酸锂单晶薄膜。然后切出该晶体的一部分,并通过光刻法在垂直于Ti图案的方向上绘制一行图案。通过真空蒸发沉积Ti并进行离子束蚀刻,从而形成脊型波导6。版权所有:(C)1993,JPO&Japio

著录项

  • 公开/公告号JPH0517295A

    专利类型

  • 公开/公告日1993-01-26

    原文格式PDF

  • 申请/专利权人 IBIDEN CO LTD;

    申请/专利号JP19910191221

  • 发明设计人 HIRAMATSU YASUJI;

    申请日1991-07-05

  • 分类号C30B29/30;C30B19/12;H01L49/02;H01S3/109;

  • 国家 JP

  • 入库时间 2022-08-22 05:16:02

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号