首页> 外国专利> Silicon@ seed particles prodn. for poly:silicon@ mfr. - by pulverising silicon@ in jet mill with top outlet for powder fluidised by gas at specified velocity, minimising atm. of fines and avoiding contamination

Silicon@ seed particles prodn. for poly:silicon@ mfr. - by pulverising silicon@ in jet mill with top outlet for powder fluidised by gas at specified velocity, minimising atm. of fines and avoiding contamination

机译:硅@种子颗粒产品对于poly:silicon @ mfr。 -通过在喷射式粉碎机中将硅粉粉碎,并在其顶部出口处以规定的速度通过气体流化粉末,从而最大程度地减少大气压。罚款并避免污染

摘要

Prodn. of Si seed particles (I) by pulverising Si particles (II) comprises: (a) introducing (II) with a particle size of ca. 300-3000 microns into a pulverisation chamber through an inlet i its wall; (b) producing a jet stream by a jet in the bottom of the chamber with a velocity of ca. 300-10000 m/s at the nozzle outlet, so that (II) near the outlet are accelerated, collide with one another and thus are pulverised; and (c) fluidising the particles in the chamber to a bed of dil. phase without upper boundary by (c-1) maintaining an average gas velocity of 0.5-30 m/s, so that pulverised small Si particles finer than a predetermined size are lifted up by the gas stream and discharged through an outlet at the top of the chamber; (c-2) the particle density between the jet nozzle and outlet is kept below ca. 0.2 by controlling the (II) supply; and (c-3) the cross-section of the outlet is smaller than that of the pulverisation chamber. A single or manifold nozzle is used. The (II) inlet is at the bottom or at the same level as the nozzle outlet and there is an almost vertical supply pipe between the hopper and inlet. There is also a gas pipe near the supply pipe, which is used for controlling the (II) supply as required; and the average gas velocity in the chamber is controlled by introducing additional gas at the bottom. The pulverisation chamber and nozzles are made of or clad with highly pure Si. USE/ADVANTAGE - The process is used for producing (I) with a dia. of ca. 100-1000 microns. It avoids contamination and suppresses the formation of fine powder. (I) are suitable for the mfr. of highly pure poly-Si.
机译:产品通过将Si颗粒(II)粉碎而形成的Si种子颗粒(I)包括:(a)引入粒径为约2μm的(II)。通过其壁的入口进入粉碎室的300-3000微米; (b)在腔室的底部通过射流产生射流,射流的速度约为1。在喷嘴出口处以300-10000 m / s的速度运转,使出口附近的(II)加速,相互碰撞从而被粉碎; (c)将腔室内的颗粒流化至小床。通过(c-1)将平均气相速度保持在0.5-30 m / s的无上限边界,从而使比预定尺寸更细的细小Si颗粒被气流提起并通过顶部的出口排出房间; (c-2)喷嘴和出口之间的颗粒密度保持在大约ca.通过控制(II)供给0.2; (c-3)出口的横截面小于粉碎室的横截面。使用一个或多个喷嘴。 (II)入口在底部或与喷嘴出口处于同一水平,并且在料斗和入口之间有一条几乎垂直的供应管。供气管附近还有一个煤气管,用于根据需要控制(II)的供气;通过在底部引入其他气体来控制腔室内的平均气体速度。粉碎室和喷嘴由高纯硅制成或包覆。使用/优势-该工艺用于生产直径为(I)的直径。约。 100-1000微米。它避免了污染并抑制了细粉的形成。 (I)适合制造。高纯度的多晶硅。

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