首页> 外国专利> METHOD OF IMPREGNATING HOLLOW ARTICLES OF POROUS MATERIAL CONTAINING SILICON CARBIDE AND/OR CARBON WITH SILICON AND DEVICE FOR EFFECTING THE SAME

METHOD OF IMPREGNATING HOLLOW ARTICLES OF POROUS MATERIAL CONTAINING SILICON CARBIDE AND/OR CARBON WITH SILICON AND DEVICE FOR EFFECTING THE SAME

机译:用硅浸渍含碳化硅和/或碳的多孔材料的空心制品的方法及其装置

摘要

FIELD: production of refractory articles. SUBSTANCE: method involves the steps of: applying silicon melt supplied through a member with capillary structure at temperature of an article to be impregnated of 1260-1400 degrees C and a temperature of the melt of 1430-1700 degrees C and keeping the article, cooling at axial temperature gradient in the article of 25-60 degrees C/m. Device for impregnating hollow articles with silicon has a hermetically sealed chamber, cylindrical resistive heater, crucible, feeder mounted in the chamber. The feeder is made of material with capillary structure. The device furthermore is provided with a support and shield, the shield thickness being variable in height and determined from the expression given in the invention description. EFFECT: enhanced efficiency. 2 cl, 1 dwg, 1 tbl
机译:领域:耐火制品的生产。物质:该方法包括以下步骤:在要浸渍的制品的温度为1260-1400摄氏度,熔体的温度为1430-1700摄氏度下,施加通过具有毛细结构的部件供应的硅熔体,并保持该制品冷却在制品中轴向温度梯度为25-60摄氏度/米。用硅浸渍中空制品的装置具有气密的腔室,圆柱形电阻加热器,坩埚,安装在腔室中的进料器。送料器由具有毛细管结构的材料制成。该装置还设置有支撑件和屏蔽件,该屏蔽件的厚度是高度可变的,并且由本发明说明书中给出的表达式确定。效果:提高效率。 2 cl,1 dwg,1汤匙

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