Method for tungsten contact hole filling by full-surface tungsten deposition with reduced layer thickness and back-etching with inverse loading effect

摘要

Method for tungsten contact hole filling by full-surface tungsten deposition with reduced layer thickness and back-etching with inverse loading effect. By means of a cooling process, the real wafer temperature during the etching process is kept below 70 DEG C and the etching rate in the contact hole is smaller than or equal to that on the substrate surface. IMAGE