FLUORINE CONTAINING SILICON OXIDE FILM,ITS FORMATION AND COMPOSITION OF SUBSTANCE THAT CONSISTS OF EACH OF F2SI (CH3)CH2 CH2 SI(CH3)F2 AND F3 SICH2 CH2 CH2 CH(SIF3)C2H5

摘要

PROBLEM TO BE SOLVED: To optimize fluorine concentration in a deposition film, the quality of an oxide, and the depositing speed and temperature by forming silicon oxide including florine on a substrate by plasma enhanced chemical vapor deposition using a specific silicon fluoride material. SOLUTION: Silicon oxide including fluorine is formed on a substrate by plasma strengthening chemical deposition using silicon fluoride materials in a chemical expression. At least one of R1 -R6 is fluorine, and the remaining Rs are independently H, F, non-fluorinated, partially fluorinated, or perflorinated, alkyl, alkenyel, alkynyl, aryl, or benzylic group, or Cx H2x at the time of connecting more than one of R1 , R2 , or R3 with R4 , R5 , or R6 by a bringing group CyH2y ((x) is 1-6 and Y is 0-6). Also, M is Si or C, (n) is 0-6, R7 is independently H, F, CzH2z+1 ((z) is 1-6) or Cr Hs Ft ((r) is 1-6, (s) is (2r+1-t), (t) is 1-(2r+1)).