LEVEL CONVERTING CIRCUIT FOR CONVERTING LEVEL OF AN INPUT SIGNAL, INTERNAL POTENTIAL GENERATING CIRCUIT FOR GENERATING INTERNAL POTENTIAL, INTERNAL POTENTIAL GENERATING UNIT GENERATING INTERNAL POTENTIAL, HIGHLY RELIABLE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TRANSISTOR HAVING HIGH BREAKDOWN VOLTAGE

摘要

The level conversion circuit according to the present invention includes a first current blocking circuit, a second current blocking circuit, a level shift circuit, and an inverter, and the first current blocking circuit includes two PMOS transistors connected to a node having a boost potential Vpp. The second current blocking circuit consists of two NMOS transistors connected to the ground node, and the level shift circuit consists of two PMOS transistors and two NMOS transistors, and penetrates between a node having a boost potential Vpp and a ground node. Before the current flows, any one transistor included in the first current interrupting circuit and any one transistor included in the second current interrupting circuit are turned off. Thus, a node having a boost voltage Vpp and Through current between ground nodes can be prevented.