Electrical parameter evaluation system, electrical parameter evaluation method, and computer-readable recording medium for recording electrical parameter evaluation program

摘要

A Z calculator calculates difference between an inversion layer capacitance by a classical theory and an inversion layer capacitance by a quantum theory, calculates Z which is a thickness of a semiconductor substrate equivalent to the difference in inversion layer capacitance. A discretization mesh generator generates a Delaunay discretization mesh for a structure of the semiconductor device to be evaluated. An electrical parameter calculator calculates electrical parameters of the semiconductor device under constraint that a charge density of channel conductivity type of the semiconductor device is set to zero at discretization mesh points of the discretization mesh on an interface between an insulating film and the semiconductor substrate and at discretization mesh points of the discretization mesh in the semiconductor substrate which are located within a distance less than the stored Z from the interface between the insulating film and the semiconductor substrate.