METHOD FOR FORMING POLYGON SEMICONDUCTOR RING LASER, POLYGON SEMICONDUCTOR RING LASER AND POLYGON SEMICONDUCTOR RING LASER GYROSCOPE

摘要

PROBLEM TO BE SOLVED: To form a polygon semiconductor ring laser wherein high alignment precision is held with a simple process.;SOLUTION: In Fig. 1 (d), dry etching is added by using first resist 1 and second resist 2 as masks, and an active layer region 12 and an N-type AlGaAs clad layer 11 are exposed only in a corner mirror part. Condition of the dry etching is the same as condition of dry etching of a first time. In this case, the layer 11 may not be etched wholly. By the above process, reflectivity at the corner mirror part is increased. In the corner mirror part, etching is performed by self alignment while a pattern of the first resist 1 is maintained, so that position deviation is not generated throughout dry etching of two times. Finally in Fig. (e), the first resist 1 and the second resist 2 are exfoliated by using a remover.;COPYRIGHT: (C)2002,JPO