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Self-aligned SiGe HBT BiCMOS on SOI substrate and method of fabricating the same
Self-aligned SiGe HBT BiCMOS on SOI substrate and method of fabricating the same
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机译:SOI衬底上的自对准SiGe HBT BiCMOS及其制造方法
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摘要
A SiGe HBT BiCMOS on a SOI substrate includes a self-aligned base/emitter junction to optimize the speed of the HBT device. The disclosed SiGe BiCMOS/SOI device has a higher performance than a SiGe BiCMOS device on a bulk substrate. The disclosed device and method of fabricating the same also retains the high performance of a SiGe HBT and the low power, high-speed properties of a SOI CMOS. In addition, the disclosed method of fabricating a self-aligned base/emitter junction provides a HBT transistor having an improved frequency response.
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