首页>
外国专利>
MOLYBDENUM-TUNGSTEN MATERIAL FOR WIRING, MOLYBDENUM-TUNGSTEN TARGET FOR WIRING, PROCESS FOR PRODUCING THE SAME, AND MOLYBDENUM-TUNGSTEN WIRING THIN FILM
MOLYBDENUM-TUNGSTEN MATERIAL FOR WIRING, MOLYBDENUM-TUNGSTEN TARGET FOR WIRING, PROCESS FOR PRODUCING THE SAME, AND MOLYBDENUM-TUNGSTEN WIRING THIN FILM
A molybdenum-tungsten material for wiring comprising 20-95 atm % of tungsten and 80-5 atm % of molybdenum and inevitable impurities as a whole. It is prepared by integrally compositing molybdenum and tungsten by. e.g., powder metallurgy or dissolution techniques, or by arranging both metals so as to have the above-specified compositional ratio. This material has a low resistivity and excellent workability and etchant resistance, and provides a wiring thin film usable as, e.g., an address wiring of a liquid crystal display. The molydbenum-tungsten target for wiring comprises 20-95 atm % of tungsten and 80-5 atm % of molybdenum and inevitable impurities, and enables the wiring thin film to be formed at a good reproducibility. IMAGE
展开▼