首页> 外国专利> The integrated system to produce silu00eccio dioxide of high purity process to produce a coating of pure silu00eccio dioxide on a substrate.Method for preparing silu00eccio dioxide of high purity.Integrated system for the distribution of oxygen of high purity to an oxidation oven of silu00eccio and for the use of oxygen of high purity to prepare high purity silu00eccio dioxide

The integrated system to produce silu00eccio dioxide of high purity process to produce a coating of pure silu00eccio dioxide on a substrate.Method for preparing silu00eccio dioxide of high purity.Integrated system for the distribution of oxygen of high purity to an oxidation oven of silu00eccio and for the use of oxygen of high purity to prepare high purity silu00eccio dioxide

机译:用于生产高纯度二氧化硅的集成系统用于在基材上生产纯二氧化硅涂层的方法。用于制备高纯度二氧化硅的方法。用于将高纯度氧气分配到容器中的集成系统氧化硅氧化炉,用于使用高纯氧制备高纯氧化硅

摘要

"The integrated system to produce silu00eccio dioxide of high purity process to produce a coating of pure silu00eccio dioxide on a substrate.Method for preparing silu00eccio dioxide of high purity.Integrated system for the distribution of oxygen of high purity to an oxidation oven of silu00eccio and for the use of oxygen of high purity to prepare silu00eccio dioxide of high purity.An integrated system for producing high purity silicon dioxide comprising: a source (2) of a feed gas containing oxygen.A cell membrane oxygen carrier (1) containing a membrane selective transport of oxygen (15).The membrane (15) is effective in high temperature to separate oxygen in the feed gas for transport of oxygen ions of the feed gas through the membrane(15) to form a permeate oxygen purified, while retaining a retained containing impurity, depleted in oxygen on a cathode side of the same.A passage (11) of the source (2) to the cathode side of the cell membrane (1), a source of silicon (25), and a furnace oxidation of silicon (5),In communication with an anode side of the cell membrane (1), for the reaction of the permeate oxygen purified with silicon in a high temperature reaction.With the purpose of producing the aforementioned reaction of silicon of high purity, with the aim to produce the said silicon dioxide of high purity.
机译:“用于生产高纯度二氧化硅的集成系统,用于在基材上生产纯二氧化硅的涂层。用于制备高纯度二氧化硅的方法。用于分配高纯度氧气的集成系统制备高纯度二氧化硅的集成系统,包括:含氧的进料气源(2),该氧化炉被送至二氧化硅的氧化炉中,并用于使用高纯度的氧气来制备高纯度的二氧化硅。含有氧气(15)的膜选择性输送的细胞膜氧气载体(1)。膜(15)在高温下可有效分离进料气中的氧气,从而使进料气中的氧离子通过膜(15)输送)形成净化的渗透氧,同时保留在阴极的阴极侧贫乏的含氧杂质。源(2)到达细胞膜(1)阴极侧的通道(11)硅的来源(25),以及硅(5)的炉氧化,与细胞膜(1)的阳极侧连通,用于在高温反应中用硅纯化的渗透氧的反应。目的是产生上述硅的反应目的在于生产高纯度的所述二氧化硅。

著录项

  • 公开/公告号BR0109926A

    专利类型

  • 公开/公告日2003-08-05

    原文格式PDF

  • 申请/专利权人 PRAXAIR TECHNOLOGY INC.;

    申请/专利号BR20010109926

  • 发明设计人 KEVIN BRUCE ALBAUGH;NITIN RAMESH KESKAR;

    申请日2001-03-29

  • 分类号C01B15/14;C01B33/20;C25B13/00;C25C7/04;

  • 国家 BR

  • 入库时间 2022-08-22 00:03:53

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