Production of an integrated semiconductor circuit comprises depositing layer sequence, anisotropically etching, oxidizing the lowermost layer of the layer sequence, depositing further layer sequence on substrate, and isotropically etching

摘要

Production of an integrated semiconductor circuit comprises depositing a first layer sequence (10) having a lowermost layer (11) made from oxidizable material arranged on a substrate covered with a gate oxide layer (3); anisotropically etching the layer sequence; oxidizing the lowermost layer of the first layer sequence; depositing a second layer sequence on the substrate so that gate structures are covered in a first surface region; and isotropically etching the second layer sequence. Preferred Features: A first etch stop layer (13) is deposited as the uppermost layer of the first layer sequence to cover the upper sides of the gate structures. An additional layer is deposited as an etch stop layer on a first surface region. The etch stop layers are made from silicon nitride or tungsten oxide or aluminum oxide.