METHOD FOR DEPOSITING ZINC OXIDE THIN FILM ON SUBSTRATE WITH GOOD COVERAGE BY ATOMIC LAYER DEPOSITION (ALD) USING ALKYL ACID ZINC ALKYL AS ZINC SOURCE

摘要

PURPOSE: A method for manufacturing zinc oxide thin film is provided which is capable of forming a zinc oxide film having high coverage property and single crystalline surface at lower temperature by atomic layer deposition. CONSTITUTION: The method comprises a step (a) of adsorbing zinc contained species on a substrate by supplying alkyl acid zinc alkyl as a zinc source to a deposition reactor; first purification step (b) of removing non-reacted zinc source and reaction byproduct from the reactor; a step (c) of adsorbing oxygen contained species on the zinc contained species adsorbed substrate by purging an oxygen source into the reactor; and second purification step (d) of removing non-reacted oxygen source and reaction byproduct from the reactor, wherein the method further comprises a step of repeatedly performing the steps (a) to (d) until a zinc oxide film having target thickness is formed.