METHOD FOR FABRICATING SINGLE CRYSTALLINE SILICON TFT-FRAM TO IMPROVE INTEGRATION AND EMBODY HIGH PERFORMANCE TFT-FRAM

摘要

PURPOSE: A method for fabricating a single crystalline silicon TFT-FRAM(thin film transistor-ferroelectric random access memory) to improve integration and achieve high performance TFT-FRAM, by bonding an implanted silicon wafer to a ferroelectric capacitor, by eliminating a splitting zone from the implanted silicon wafer and by forming a transistor in a single crystalline thin film silicon. CONSTITUTION: A ferroelectric capacitor array is formed. An implanted silicon wafer including a silicon thin film is bonded to the ferroelectric capacitor array so as to be connected to an upper electrode(13) of a ferroelectric capacitor. The rest of the implanted silicon wafer except the silicon thin film is eliminated. A transistor is formed on the silicon thin film.