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Magnetic tunnel effect type magnetic head having a magnetic tunnel junction element sandwiched with conductive gap layers between a pair of magnetic shielding layers

机译：具有在一对磁屏蔽层之间夹有导电间隙层的磁隧道结元件的磁隧道效应型磁头

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摘要

In a magnetic tunnel effect type magnetic head (20) having a magnetic tunnel junction element (26) sandwiched with conductive gap layers (25) and (27) between a pair of magnetic shielding layers (24) and (28), the conductive gap layers (25) and (27) are formed from at least one nonmagnetic metal layer containing a metal element selected from Ta, Ti, Cr, W, Mo, V, Nb and Zr. Therefore, the magnetic head (20) can have an improved face opposite to a magnetic recording medium.

机译：在磁隧道效应型磁头（ 20 ）中，其磁隧道结元件（ 26 ）夹在导电间隙层（ 25 ）中，并且一对磁屏蔽层（ 24 ）和（ 28 ）之间的（ 27 ），即导电间隙层（ 25 ）和（ 27 ）由至少一种非磁性金属层形成，该非磁性金属层包含选自Ta，Ti，Cr，W，Mo，V，Nb和Zr的金属元素。因此，磁头（ 20 ）可以具有与磁记录介质相对的改进的面。 展开▼

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公开/公告号US6909584B2

专利类型

公开/公告日2005-06-21

原文格式PDF

申请/专利权人 EIJI NAKASHIO;SEIJI ONOE;JUNICHI SUGAWARA;
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申请/专利号US20010897236

发明设计人 EIJI NAKASHIO;SEIJI ONOE;JUNICHI SUGAWARA;
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申请日2001-07-02

分类号G11B5/39;

国家 US

入库时间 2022-08-21 22:20:29

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