FLIP-CHIP BONDING GaN LED WITH OPTIMIZED ELECTRODE ARRANGEMENT CAPABLE OF IMPROVING BRIGHTNESS, OBTAINING UNIFORM CURRENT DIFFUSION EFFECT AND MAXIMIZING RADIATION AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A GaN LED(Light Emitting Diode) for flip-chip bonding and manufacturing method thereof are provided to improve the brightness and to obtain uniform current diffusion effect by optimizing the arrangement of minimized electrodes, and to maximize radiation by using an additional bonding electrode as well. CONSTITUTION: An emissive structure composed of a first GaN clad layer(43a), an active layer(43b) and a second GaN clad layer(43c) is formed on a sapphire substrate(41). One portion or more of the first GaN clad layer are exposed to the outside. A line-type first and second electrode(45) with minimum line width are formed on the exposed portions of the first GaN clad layer and on the second GaN clad layer. A passivation layer(47) for protecting the emissive structure is formed thereon. At this time, the line-type first and second electrodes are exposed to the outside through holes of the passivation layer. A first and second bonding electrode(48a,48b) insulated with each other are connected with the exposed line-type first and second electrodes.