HETEROJUNCTION STRUCTURE OF P-TYPE SEMICONDUCTOR THIN FILM AND ZnO BASED NANO-BAR, MANUFACTURING METHOD THEREOF AND DEVICE USING THE SAME FOR EMBODYING EASILY CORRESPONDING DEVICE WITH HETEROJUNCTION STRUCTURE AT ROOM TEMPERATURE AND HIGH TEMPERATURE WITHOUT DEGRADATION OF EFFICIENCY

摘要

PURPOSE: A heterojunction structure of a P-type semiconductor thin film and a ZnO based nano-bar, a manufacturing method thereof and a device using the same are provided to embody easily a corresponding device with heterojunction structure at a room temperature and at a high temperature without the degradation of efficiency by using high exciton binding energy of ZnO. CONSTITUTION: A plurality of N-type ZnO based nano-bars are vertically grown on a P-type semiconductor thin film. The ZnO of each nano-bar has high exciton binding energy, so that a heterojunction structure is easily realized. A band gap of P-type semiconductor is in a range of 1.5 to 4.5 eV.