METHOD FOR GROWING NITRIDE-BASED SEMICONDUCTOR CRYSTAL TO GROW HIGH-QUALITY NITRIDE SEMICONDUCTOR THIN FILM AND USE SUCH THIN FILM AS MATERIAL OF LIGHT EMITTING DEVICE REQUIRING HIGH BRIGHTNESS AND HIGH RELIABILITY

摘要

PURPOSE: A method for growing a nitride-based semiconductor crystal is provided to grow a high-quality nitride semiconductor thin film and use such a thin film as a material of a light emitting device requiring high brightness and high reliability by using a SiC layer as a buffer layer. CONSTITUTION: A SiC thin film of a predetermined thickness on a sapphire substrate(11) is used as a buffer layer(12). An InAlGaN-based thin film is grown on the buffer layer. The thickness(t) of the SiC thin film used as the buffer layer is 0.5 nanometer=t=500 nanometer. CBr4 and/or CxHy(x,y are integers) are used as a carbon precursor. The growth temperature(T) of the SiC buffer layer is 300 deg.C=T=1500 deg.C.