首页> 外国专利> Semiconductor substrate for semiconductor devices comprises metallic surfaces and non-metallic surfaces having a layer with irregularities to increase the adhesion between the non-metallic surfaces and a pressing composition

Semiconductor substrate for semiconductor devices comprises metallic surfaces and non-metallic surfaces having a layer with irregularities to increase the adhesion between the non-metallic surfaces and a pressing composition

机译:用于半导体器件的半导体衬底包括金属表面和非金属表面,该金属表面和非金属表面具有不规则的层以增加非金属表面与压制组合物之间的粘附力。

摘要

Semiconductor substrate comprises metallic surfaces and non-metallic surfaces having a layer with irregularities to increase the adhesion between the non-metallic surfaces and a pressing composition. An independent claim is also included for a process for the production of a semiconductor substrate.
机译:半导体衬底包括金属表面和非金属表面,该金属表面和非金属表面具有不规则的层,以增加非金属表面和压制组合物之间的粘附性。还包括用于制造半导体衬底的方法的独立权利要求。

著录项

  • 公开/公告号DE10338078A1

    专利类型

  • 公开/公告日2005-03-24

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2003138078

  • 发明设计人 HAEBERLEN OLIVER;

    申请日2003-08-19

  • 分类号H01L23/31;H01L21/56;H01L23/02;H01L21/302;

  • 国家 DE

  • 入库时间 2022-08-21 22:01:16

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