首页> 外国专利> INSULATING FILM FORMING METHOD EMPLOYING LIQUID DROP DISCHARGING SYSTEM, METHOD OF MANUFACTURING SURFACE ACOUSTIC WAVE ELEMENT PIECE, SURFACE ACOUSTIC WAVE ELEMENT, AND SURFACE ACOUSTIC WAVE DEVICE

INSULATING FILM FORMING METHOD EMPLOYING LIQUID DROP DISCHARGING SYSTEM, METHOD OF MANUFACTURING SURFACE ACOUSTIC WAVE ELEMENT PIECE, SURFACE ACOUSTIC WAVE ELEMENT, AND SURFACE ACOUSTIC WAVE DEVICE

机译:采用液滴排放系统的绝缘成膜方法,制造表面声波元件的方法,表面声波元件和表面声波装置

摘要

PROBLEM TO BE SOLVED: To provide an insulating film forming method employing a liquid drop discharging system appropriate for manufacturing a surface acoustic wave element piece.;SOLUTION: In an insulating film forming method employing a liquid drop discharging system for forming an insulating film covering a pattern electrode of a uniform film thickness formed on a piezoelectric substrate, liquid drops of insulating film forming materials whose discharge amounts are controlled are selectively applied to an insulating film forming portion of metal wiring formed on the piezoelectric substrate by the liquid drop discharging system and to the piezoelectric substrate, and the insulating film forming portion and a non-forming portion are formed on the metal wiring. The insulating film forming materials use inorganic materials.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种采用液滴排出系统的绝缘膜形成方法,该方法适用于制造声表面波元件片。解决方案:一种采用液滴排出系统的绝缘膜形成方法,用于形成覆盖在表面声波元件片上的绝缘膜。在压电基板上形成膜厚均匀的图案电极时,通过液滴喷出系统,将喷出量受到控制的绝缘膜形成材料的液滴选择性地施加到在压电基板上形成的金属配线的绝缘膜形成部上,压电基板,在金属配线上形成绝缘膜形成部和非形成部。绝缘膜形成材料使用无机材料。;版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006238327A

    专利类型

  • 公开/公告日2006-09-07

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20050053360

  • 发明设计人 YOSHIZAWA GEN;

    申请日2005-02-28

  • 分类号H03H3/08;B05D1/26;B05D5/12;H03H9/145;

  • 国家 JP

  • 入库时间 2022-08-21 21:52:50

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