Methods for forming silicon dioxide layers on substrates using atomic layer deposition and semiconductor device obtained therefrom

摘要

PURPOSE: A method of forming a silicon dioxide layer and a semiconductor device thereby are provided to obtain precisely controlled surface characteristics from the silicon dioxide layer by using a silicon compound with at least two silicon atoms as a reactant. CONSTITUTION: A functionalized surface of a substrate is exposed to a first compound consisting of a first reactant and a first catalyst(132). A silicon dioxide unit layer is formed on the functionalized surface of the substrate by exposing the resultant structure to a second compound consisting of a second reactant and a second catalyst(136). At this time, at least one or two out of a step (a) to a step (c) have to be utilized. Under the step (a), the first reactant is used, wherein the first reactant contains at least one element selected from a group consisting of silicon compounds with at least two silicon atoms. Under the step (b), the first catalyst is used, wherein the first catalyst contains at least one element selected from a group consisting of tertiary aliphatic amine compounds. Under the step (c), the first reactant and the first catalyst are used in combination with each other.