首页> 外国专利> Process for measuring the characteristics of a structure especially on a mask or wafer in semiconductor technology scans the structure in rows in at least two different directions

Process for measuring the characteristics of a structure especially on a mask or wafer in semiconductor technology scans the structure in rows in at least two different directions

机译:在半导体技术中,尤其是在掩模或晶圆上,用于测量结构特征的过程会在至少两个不同方向上按行扫描结构

摘要

A process for measuring and characterizing a structure (30) comprises scanning it in rows to form a characteristic appearance with the structure being scanned in at least two different directions (R1,R2) to give a mean (Aresult) and the characteristic appearance determined. An independent claim is also included for a measuring apparatus for the above process.
机译:测量和表征结构的过程(30)包括将其扫描成行以形成特征外观,其中沿至少两个不同方向(R1,R2)扫描该结构以给出平均值(结果)和确定的特征外观。还包括用于上述过程的测量设备的独立权利要求。

著录项

  • 公开/公告号DE102004021442A1

    专利类型

  • 公开/公告日2005-11-24

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20041021442

  • 发明设计人 ROTSCH CHRISTIAN;

    申请日2004-04-28

  • 分类号H01L21/66;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:56

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