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Formation of wall oxide films in flash memory device by performing oxidation process in gas atmosphere comprising hydrogen and oxygen in in-situ steam generation oxidation mode
Formation of wall oxide films in flash memory device by performing oxidation process in gas atmosphere comprising hydrogen and oxygen in in-situ steam generation oxidation mode
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机译:通过在原位产生蒸汽的氧化模式下在包含氢和氧的气体气氛中进行氧化过程在闪存设备中形成壁氧化膜
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摘要
Formation of wall oxide films in flash memory device includes providing a semiconductor substrate in which trenches are formed, and performing an oxidation process in a gas atmosphere comprising hydrogen and oxygen in an in-situ steam generation (ISSG) oxidation mode to form wall oxide films on sidewalls of the trenches. An independent claim is also included for formation of isolation film in a flash memory device by providing a semiconductor substrate (10) in which a pad oxide film (11a) is formed; depositing a pad nitride film (12) on the pad oxide film; etching the pad nitride film and pad oxide film, and contemporaneously recessing some of a top of the substrate to form first trenches; forming spacers (16a) on the sidewalls of first trenches; performing first oxidation process in ISSG oxidation mode in a gas atmosphere comprising hydrogen and oxygen to oxidize the top of semiconductor substrate which is exposed between the spacers; etching the semiconductor substrate through the first trenches to form second trenches; performing a second oxidation process in ISSG oxidation mode in a gas atmosphere comprising hydrogen and oxygen to form wall oxide films (18) on sidewalls of the second trenches; and forming an isolation film to fill the second trenches.
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