Ions implantation apparatus for use during transistor manufacture, has beam parallelizer to rotate converged/diverged ion beam in synchronization with quadrupole magnet assembly, to implant ions into wafer

摘要

A X/Y scanner (22) deflects transmitted ion beam focussed by a quadrupole magnet assembly (21), in both horizontal and vertical directions. A quadrupole magnet assembly (23) converges and diverges the ion beam deflected by scanner in both directions. A beam parallelizer (24) rotates the ion beam in synchronization with the magnet assembly (23), to implant ions into a wafer (25). An independent claim is also included for ions implantation method.