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Vertical double-diffused metal oxide semiconductor device has source region in close proximity to drain region, having heavily doped diffusion layer
Vertical double-diffused metal oxide semiconductor device has source region in close proximity to drain region, having heavily doped diffusion layer
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机译:垂直双扩散金属氧化物半导体器件的源极区域紧邻漏极区域,具有重掺杂扩散层
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摘要
A source region (165a) in close proximity to drain region (158), has heavily doped diffusion layer (164a) formed in region (160a). The source region (165b) has heavily doped diffusion layers (162,164b) which are formed in region (160b).
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