首页>
外国专利>
EPITAXIAL GROWTH OF ALIGNED ALGAINN NANOWIRES BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION
EPITAXIAL GROWTH OF ALIGNED ALGAINN NANOWIRES BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION
展开▼
机译:金属有机化学气相沉积法对准的阿尔金纳米线的表观生长
展开▼
页面导航
摘要
著录项
相似文献
摘要
Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. 1010 M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/A1N trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on Mplane AIN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self aligned nanowire devices, interconnects, and networks.
展开▼