Metal oxide semiconductor field effect transistor, comprises drift zone having sub zone arranged between another sub zone and body zone, and drift zone is doped more strongly than sub zone

摘要

The transistor comprises a semiconductor body (1) with multiple source electrode (31,32,33,34), which is designed with transistor cells in a successive drain zone (10) of a conduction type (n) in a vertical direction. The drift zone has a sub zone (21), which is arranged between another sub zone and the body zone (30), and is doped more strongly than the sub zone (22). The drift zone has another sub zone (23) for the formation of an edge termination between the sub zone and the lateral edge (13) of the semiconductor body, which is doped weaker than the sub zone and it has a larger dimension. Independent claims are also included for the following: (1) a method for the production of an edge termination of a semiconductor body, involves producing of a semiconductor layer by the conduction type (2) a method for the production of an edge termination of a semiconductor body, involves producing of a semiconductor layer by the conduction type, which is more weakly doped than the substrate.