Magnetoresistive device for e.g. latch, has magnetoresistive elements, in magnetostatic interaction, with soft and hard ferromagnetic layers, traversed by perpendicular current, respectively having anti-parallel and parallel magnetizations

摘要

The device has magnetoresistive elements (10, 20) e.g. tunnel junction, in magnetostatic interaction so that magnetic flux circulating between them is closed via their CoFe and NiFe layers (26, 27) forming soft ferromagnetic layers. Conductive reading lines (11-14) linked to the elements detect the layers` magnetic state by measuring the magneto-resistance ohmic value. The magnetizations of the layers are anti-parallel and the magnetizations of a CoFe layer (24), forming a hard ferromagnetic layer, of the elements are parallel. The layers of the elements are traversed by perpendicular current. The magnetoresistive elements are associated to a writing line (15) which controls the magnetization of each soft ferromagnetic layer.