METHOD FOR PROCESSING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for processing a group III nitride semiconductor that can process a group III nitride semiconductor with high precision and at high speed without damaging its surface.;SOLUTION: In a chlorine-containing gas atmosphere under the atmospheric pressure or under a pressure near the atmospheric pressure, plasma is generated by a radical supply section 2 at a location away from a single-crystal GaN substrate 6 as a processed object, thus generating radical. The substrate 6 is heated up to a temperature equal to or higher than the boiling temperature of chloride of a group III element (Ga) contained in the substrate 6, and at the same time, the radical generated in plasma of a plasma generator (electrode section 81) is brought into contact with the surface of the substrate 6, thereby processing its surface.;COPYRIGHT: (C)2009,JPO&INPIT