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METHOD FOR FORMING AN ULTRA LOW DIELECTRIC FILM BY FORMING AN ORGANOSILICON MATRIX AND LARGE POROGENS AS A TEMPLATE FOR INCREASED POROSITY
METHOD FOR FORMING AN ULTRA LOW DIELECTRIC FILM BY FORMING AN ORGANOSILICON MATRIX AND LARGE POROGENS AS A TEMPLATE FOR INCREASED POROSITY
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机译:通过形成有机硅基体和大量孔隙作为增加孔隙度的模板来形成超低介电薄膜的方法
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摘要
Ultra low K nanoporous dielectric films may be formed by chemical vapor deposition of silicon-containing components and large non-silicon containing porogens having labile groups. In accordance with one embodiment of the present invention, a low K nanoporous film may be formed by the oxidative reaction between trimethylsilane (the silicon-containing component) and alpha-terpinene (the non-silicon containing component). In accordance with certain embodiments of the present invention, the oxidant can comprise other than molecular oxygen, for example water vapor introduced in-situ or remotely, and then exposed to RF energy to generate reactive ionic species.
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