Method for producing semiconductor element, involves forming memory layer sequence on support, which has lower dielectric layer, charge trapping layer and upper dielectric layer

摘要

The method involves forming a memory layer sequence (5) on the support (1), which has a lower dielectric layer (2), a charge trapping layer (3) and an upper dielectric layer (4). A periodically structured layer is made of two materials (10) over the support made of a third material. The latter material and the third material are taken away with respect to the former material (10). The other structured layer coats two portions of the materials and releases a portion of the latter material, where the structured layers are used as masks.