SOLGEL SOLUTION FOR FORMING FERROELECTRIC FILM, METHOD OF MANUFACTURING SOLGEL SOLUTION FOR FORMING FERROELECTRIC FILM, FERROELECTRIC FILM, FERROELECTRIC MEMORY, PIEZOELECTRIC ELEMENT, AND PYROELECTRIC ELEMENT

摘要

PROBLEM TO BE SOLVED: To solve, in PZT in usage for ferroelectric memory, problems that a rhombohedral system PZT, which contains Zr more than in a rate, Zr/Ti=52/48, shows a hysteresis of a slim figure, and can drive in a low voltage, however, shows a defective hysteresis in a characteristic of polygon, and problems that a pyramidal quadratic system PZT, which contains rich in Ti, has a figure of hysteresis good in a characteristic of polygon, however, an anti-electric field is large, low voltage driving is difficult, and is impossible to keep reliability.;SOLUTION: An ester of organic acid is added to a solgel solution for forming a pyramidal quadratic system PZT in a range of 4pH7 to form a three-dimentional huge network gel, and lattice information of a substrate covered with a Pt(111) film is more utilized to a (111) orientation PZT film than before an additive is added. Or a base alcohol is added to a solgel solution for forming a rhombohedral system PZT ferroelectric film in a range of 7pH10 to form a two-dimentional fine network gel, and a rhombohedral system PZT ferroelectric crystal to be obtained itself can more stably exist in a (001) orientation film than before an additive is added.;COPYRIGHT: (C)2009,JPO&INPIT