首页>
外国专利>
Method of integration of a component of the type iii - n, such as the gan, on a silicon substrate (001).
Method of integration of a component of the type iii - n, such as the gan, on a silicon substrate (001).
展开▼
机译:将类型为iii-n的组件(例如gan)集成在硅衬底上的方法(001)。
展开▼
页面导航
摘要
著录项
相似文献
摘要
The method involves placing a masking layer on rectangular mesa shaped host zones that are not arranged to receive a III-IV type component i.e. gallium nitride. The zones are prepared to generate a domain comprising a single type of privileged terrace, in a surface. An aluminum nitride type intermediate layer is formed on the host zones, along a structure made of III-IV material, by a molecular-beam epitaxy to form a qualified mono-crystalline structure. The masking layer and overlying polycrystalline layers are suppressed, and MOS/complementary MOS structures are integrated on non host zones.
展开▼