Substrate for e.g. flash memory in camera, has dielectric layers, charge storage layer, conducting layer and support layer that are stacked on active layer, and another dielectric layer placed between conducting and support layers

摘要

The substrate (100) has dielectric layers (104, 108), electrical charge storage layer (106), conducting layer (110) and support layer (116) that are stacked on an active layer (118). A dielectric layer (112) is placed between the layers (110, 116). The layer (110) is made of unique/composite amorphous/polycrystalline semiconductor. The active layer is made of monocrystalline and/or stressed semi-conductor. The support layer is made of semiconductor, glass, quartz, sapphire or diamond. The dielectric layers (104, 108, 112) are made of silicon oxide. The storage layer is made of silicon nitride. An independent claim is also included for a method for realizing a substrate.