Complementary MOS image sensor, has photodiode including part with contact electrically connected to gate of read transistor, and another part with N-type region covered by P-type region electrically connected to potential of substrate

摘要

The sensor has a reinitializing gate (GR) adjacent to a photodiode (PD) of each of complementary MOS pixels to discharge charges of the photodiode to a drain (DR). The photodiode has two distinct parts (PD1, PD2) that are not adjacent and adjacent to the gate, respectively. The part (PD1) has an N-type region (12) in a P-type substrate (10) and an electrical contact (16) electrically connected to a gate of a read transistor (TL) e.g. voltage follower transistor. The part (PD2) has an N-type region (14) covered by a P-type region (18) electrically connected to potential of the substrate.