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DEPTH CALIBRATION SAMPLE FOR SECONDARY ION MASS SPECTROMETRY, PRODUCTION METHOD OF THE SAME AND SECONDARY ION MASS SPECTROMETRY
DEPTH CALIBRATION SAMPLE FOR SECONDARY ION MASS SPECTROMETRY, PRODUCTION METHOD OF THE SAME AND SECONDARY ION MASS SPECTROMETRY
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机译:二次离子质谱的深度校准样品,相同和二次离子质谱的生产方法
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摘要
PROBLEM TO BE SOLVED: To provide a standard sample for depth calibration of secondary ion mass spectrometry which has an impurity concentration distribution in a shallow region like a transition region.;SOLUTION: The standard sample is produced by steps of: forming an ion implantation layer 2 by ion-implanting In or Ga to a silicon substrate 1; and forming a redistribution layer 4 by accumulating ion-implanted In or Ga in a neighborhood of the surface of the silicon substrate 1 by irradiating the silicon substrate 1 with an oxygen ion 3. A standard sample having a known In or Ga concentration distribution is prepared according to the irradiation angle and irradiation energy of the oxygen ion 3.;COPYRIGHT: (C)2010,JPO&INPIT
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