GROWTH METHOD OF A NITRIDE SINGLE CRYSTAL THIN FILM USING A NITRIDE SINGLE CRYSTAL GROWTH SUBSTRATE OF A LARGE DIAMETER AND A MANUFACTURING METHOD OF A NITRIDE SEMICONDUCTOR LIGHT EMITTIG DEVICE USING THE SAME

摘要

PURPOSE: A growth method of a nitride single crystal thin film and a manufacturing method of a nitride semiconductor light emitting device using the same are provided to improve a manufacturing yield of the light emitting by manufacturing the nitride semiconductor light emitting device using the nitride single crystal film.;CONSTITUTION: A through hole(120) is formed on a nitride single crystal growth substrate(110). An insulating mask layer(130) is formed to expose an upper side of the nitride single crystal growth substrate. A nitride single crystal thin film(140) is formed from the upper side of the exposed nitride single crystal growth substrate. The nitride single crystal thin film is separated with etching the nitride single crystal growth substrate and the insulating mask layer. The insulating mask layer includes one material among a SiO2 and a SiN.;COPYRIGHT KIPO 2010