A process for modifying the surface of a sample by means of a pulsed ion beam or ion beam generated by means of a particle beam with homogeneously or gaussian distributed current density

摘要

A process for the modification of the surface of a sample (1) by means of a pulsed ion beam (2) of a can be switched electrically configured ion source (3) or by means of an ion beam generated particle beam (2) with homogeneously or gaussian distributed current density, in which first a removal - or deposition profile of the sample (1) is determined, and at least one ion beam (2) or particle beam (2) at least once through the surface or parts of the surface of the sample (1) is guided, at the location of the ion beam (2) or of the particle beam (2) a local removal of the sample (1) or a local deposition on the sample (1) according to the specific removal - or deposition profile is generated, characterized in that the control of the local removal - or deposition rate by the combination of residence time and pulse duration of the ion beam (2) or particle beam (2) is adjusted, wherein in order to control the local removal - or deposition rate of the pulse duty factor of the pulses of the ion beam (2) or particle beam (2) is varied between 0 and 1.