Nanoscale deformation measuring method for mapping constraints in e.g. MOSFET, involves deducing difference of crystal and/or orientation parameters between zones, where difference indicates state of deformation of measurement zone

摘要

The method involves preparing a lamella-shaped specimen comprising reference and measurement zones (A, B). A face of the specimen is illuminated by an electron beam (F power in). A beam of radiation diffracted by the zone (B) is superposed on a beam of radiation diffracted by the zone (A) so as to cause the beams to interfere. The spatial periodicity and the orientation of fringes of an interference pattern (FI) are measured. A difference of crystal and/or orientation parameters between the zones is deduced, where the difference indicates a state of nanoscale deformation of the zone (B). Independent claims are also included for the following: (1) a system for measuring nanoscale deformations in a portion of a crystalline specimen (2) an electronic holography device for implementing a measuring nanoscale deformation measuring method.