首页> 外国专利> VALUATION METHOD OF DIELECTRIC BREAKDOWN LIFETIME OF GATE INSULATING FILM, VALUATION DEVICE OF DIELECTRIC BREAKDOWN LIFETIME OF GATE INSULATING FILM, AND PROGRAM FOR EVALUATING DIELECTRIC BREAKDOWN LIFETIME OF GATE INSULATING FILM

VALUATION METHOD OF DIELECTRIC BREAKDOWN LIFETIME OF GATE INSULATING FILM, VALUATION DEVICE OF DIELECTRIC BREAKDOWN LIFETIME OF GATE INSULATING FILM, AND PROGRAM FOR EVALUATING DIELECTRIC BREAKDOWN LIFETIME OF GATE INSULATING FILM

机译:门绝缘膜的电击穿寿命的评估方法,门绝缘膜的电击穿寿命的评估装置,以及门绝缘膜的电击穿寿命的评估程序

摘要

PROBLEM TO BE SOLVED: To provide a valuation method of a dielectric breakdown lifetime of a gate insulating film, which allows to decide determination condition of soft breakdown uniquely.;SOLUTION: The valuation method performs: a process S1 of deciding a Weibull slope of lifetime distribution until reaching a soft breakdown of the gate insulating film of the MOS type element; a process S2 of deciding a detection condition of the soft breakdown from the decided Weibull slope after the above step; and a process S3 of executing a dielectric breakdown test by using the decided detection condition, when evaluating the dielectric breakdown lifetime of the gate insulating film of the MOS type element.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种栅绝缘膜的介电击穿寿命的评估方法,该方法可以唯一地确定软击穿的确定条件。解决方案:该评估方法执行:确定寿命的威布尔斜率的过程S1直到MOS型元件的栅极绝缘膜发生软击穿为止的分布;步骤S2,在上述步骤之后,根据所确定的威布尔斜率确定软击穿的检测条件;当评估MOS型元件的栅极绝缘膜的介电击穿寿命时,使用确定的检测条件执行介电击穿测试的过程S3;版权:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP2011040541A

    专利类型

  • 公开/公告日2011-02-24

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP20090185966

  • 发明设计人 TSUJIKAWA SHINPEI;

    申请日2009-08-10

  • 分类号H01L21/66;H01L29/78;G01N27/92;

  • 国家 JP

  • 入库时间 2022-08-21 18:23:36

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